B772
器件描述：PNP EPITAXIAL PLANAR TRANSISTOR
器件厂商：HSMC [Hi-Sincerity Mocroelectronics]
文件大小：41.73KB，共4页
Sponsor by e络盟器件资料摘要：
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HSB772 HSMC Product Specification
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA
BVCEO -30 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -1 uA VCB=-30V
IEBO - - -1 uA VEB=-3V
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
*hFE1 30 - - IC=-20mA, VCE=-2V
*hFE2 100 200 400 IC=-1A, VCE=-2V
fT - 80 - MHz IC=-0.1A, VCE=-5V
Cob - 55 - pF VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100-200 160-320 200-400
TO-126ML
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HSB772 HSMC Product Specification
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA
BVCEO -30 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -1 uA VCB=-30V
IEBO - - -1 uA VEB=-3V
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
*hFE1 30 - - IC=-20mA, VCE=-2V
*hFE2 100 200 400 IC=-1A, VCE=-2V
fT - 80 - MHz IC=-0.1A, VCE=-5V
Cob - 55 - pF VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100-200 160-320 200-400
TO-126ML