B1S – B8S 1 of 3 © 2002 Won-Top Electronics
B1S – B8S
0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
! Glass Passivated Die Construction G
! Low Forward Voltage Drop
! High Current Capability
! High Surge Current Capability - + H
! Designed for Surface Mount Application B ~ ~ D E
! Plastic Material – UL Recognition Flammability
Classification 94V-O C
M
A L
Mechanical Data J
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 K
! Polarity: As Marked on Case
! Weight: 0.22 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol B1S B2S B4S B6S B8S Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 200 400 600 800 V
RMS Reverse Voltage VR(RMS) 70 140 280 420 560 V
Average Rectified Output Current @T
A
= 40°C IO 0.5 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 30 A
I
2
t Rating for Fusing (t < 8.35ms) I
2
t10
2
s
Forward Voltage per element @I
F
= 0.5A VFM 1.0 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
IRM
5.0
500
µA
Typical Junction Capacitance (per leg) (Note 1) Cj 25 pF
Typical Thermal Resistance (per leg) (Note 2) RG01JA 85 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 13mm
2
copper pads.
WTE
POWER SEMICONDUCTORS
MB-S
Dim Min Max
A 4.50 4.90
B 3.80 4.20
C 0.006 0.35
D —0.20
E —7
G 0.70 1.10
H 1.30 1.70
J 2.30 2.70
K 2.30 2.70
L —3.0
M 0.50 0.80
All Dimensions in mm