5-98
2–10 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-46101
100 mil Flange PackageFeatures
• High Output Power:
27.0␣ dBm Typical P
1 dB

at 4␣ GHz
• High Gain at 1 dB
Compression:
12.0␣ dB Typical G
1 dB
at 4␣ GHz
• High Power Efficiency:
38% Typical at 4␣ GHz
Symbol Parameters and Test Conditions
[1]
Units Min. Typ. Max.
Electrical Specifications, T
A
= 25°C
P
1 dB
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 25.0 27.0
V
DS
= 9 V, I
DS
= 125 mA f = 8.0 GHz 26.5
G
1 dB
1 dB Compressed Gain: V
DS
= 9 V, I
DS
= 125 mA f = 4.0 GHz dB 9.0 10.0
f = 8.0 GHz 5.0
η
add
Efficiency @ P
1dB
: V
DS

= 9 V, I
DS

= 125 mA f = 4.0 GHz % 38
g
m
Transconductance: V
DS
= 2.5 V, I
DS
= 125 mA mmho 100
I
DSS
Saturated Drain Current: V
DS
= 2.5 V, V
GS
= 0 V m A 200 330 450
V
P
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 5 mA V -5.4 -3.5 -2.0
Note:
1. RF Performance is determined by packaging and testing 10 samples per wafer.
Description
The ATF-46101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 10 GHz frequency
range. This nominally 0.5␣ micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 1.25␣ millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
5965-8731E