5-67
2–16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
36 micro-X Package
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Electrical Specifications, T
A
= 25°C
G
SS
Tuned Small Signal Gain: V
DS
= 5 V, I
DS
= 30 mA f = 12.0 GHz dB 7.0 9.0
NF
O
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 10 mA f = 12.0 GHz dB 2.2
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 10 mA f = 12.0 GHz dB 6.0
P
1 dB
Power Output @ 1 dB Gain Compression: f = 12.0 GHz dBm 15.0 18.0
V
DS
= 5 V, I
DS
= 30 mA
g
m
Transconductance: V
DS
= 3 V, V
GS
= 0 V mmho 15 35
I
DSS
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V mA 30 50 90
V
P
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA V -3.5 -1.5 -0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Features
• High Output Power:
18.0␣ dBm Typical P
1 dB
at 12␣ GHz
• High Gain:
9.0 dB Typical G
SS
at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
[1]
5965-8704E
Description
The ATF-26836 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.