5-60
0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
70 mil Package
Description
The ATF-25570 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a hermetic, high reliabil-
Features
• High Output Power:
20.5 dBm Typical P
1 dB

at 4␣ GHz
• Low Noise Figure:
1.0 dB Typical at 4 GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, T
A
= 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA f = 4.0 GHz dB 1.0 1.3
f = 6.0 GHz 1.2
f = 8.0 GHz 1.4
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 20 mA f = 4.0 GHz dB 13.0 14.0
f = 6.0 GHz 11.0
f = 8.0 GHz 8.5
P
1 dB
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 20.5
V
DS
=5 V, I
DS
= 50 mA
G
1 dB
1 dB Compressed Gain: V
DS
=5 V, I
DS
=50 mA f = 4.0 GHz dB 13.0
g
m
Transconductance: V
DS
=3 V, V
GS
= 0 V mmho 50 80
I
DSS
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V m A 50 100 150
V
P
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA V -3.0 -2.0 -0.8
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8711E