5-19
0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
V
DS
= 2 V, I
DS
␣ =␣ 25 mA
• High Associated Gain:
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P
1 dB

at 4 GHz
ATF-10100
Chip Outline
Electrical Specifications, T
A
= 25°C
Symbol Parameters and Test Conditions
[1]
Units Min. Typ. Max.
NF
O
Optimum Noise Figure: V
CE
= 2 V, I
DS
= 25 mA f = 2.0 GHz dB 0.4
f = 4.0 GHz dB 0.55 0.7
f = 6.0 GHz dB 0.8
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA f = 2.0 GHz dB 17.0
f = 4.0 GHz dB 12.0 14.0
f = 6.0 GHz dB 12.0
P
1 dB
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 21.0
V
DS
= 4 V, I
DS
= 70 mA
G
1 dB
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA f = 4.0 GHz dB 15.0
g
m
Transconductance: V
DS
= 2 V, V
GS
= 0 V mmho 80 140
I
DSS
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V m A 70 130 180
V
P
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA V -3.0 -1.3 -0.8
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer.
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
DSS
GG
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8702E