4 Megabit
(256K x 16)
5-volt Only
CMOS Flash
Memory
Preliminary
Features
•
Single Voltage Operation
- 5V Read
- 5V Reprogramming
•
Fast Read Access Time - 90 ns
•
Internal Erase/Program Control
•
Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
•
Fast Sector Erase Time - 10 seconds
•
Word-By-Word Programming - 50 µs/Word
•
Hardware Data Protection
•
DATA Polling For End Of Program Detection
•
Low Power Dissipation
- 50 mA Active Current
- 300 µA CMOS Standby Current
•
Typical 10,000 Write Cycles
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
I/O0 - I/O15
Data
Inputs/Outputs
NC No Connect
The AT49F4096 is a 5-volt-only, 4 megabit Flash Memory organized as 256K words
of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology,
the device offers access times to 90 ns with power dissipation of just 275 mW. When
deselected, the CMOS standby current is less than 300 µA.
Description
(continued)
AT49F4096
TSOP Top View
Type 1
SOIC (SOP)
0569C
AT49F4096
4-219