1
Features
• 4.5V to 5.5V Read/Write
• Access Time - 70 ns
• Sector Erase Architecture
– Thirty 32K Word (64K byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K byte) Sectors with Individual Write Lockout
– Two 16K Word (32K byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 10 µs
• Fast Sector Erase Time - 200 ms
• Dual Plane Organization, Permitting Concurrent Read while Program/Erase
– Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
– Memory Plane B: Twenty-Four 32K Word Sectors
• Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
• Low Power Operation
– 40 mA Active
–10 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Program Unlock Command
• TSOP, CBGA, and µBGA Package Options
• Top or Bottom Boot Block Configuration Available
Description
The AT49F16X4(T) is a 5.0 volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 blocks for
erase operations. The device is offered in 48-pin TSOP and 48-ball µBGA packages.
The device has CE, and OE control signals to avoid any bus contention. This device
can be read or reprogrammed using a single 5.0V power supply, making it ideally
suited for in-system programming.
Rev. 0977B–06/98
AT49BV1604
16-Megabit
(1M x 16/2M x 8)
5-volt Only
Flash Memory
AT49F1604
AT49F1604T
AT49F1614
AT49F1614T
Advance
Information
AT49BV16X4(T)Pin Configurations
Pin Name Function
A0 - A19 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
RDY/BUSY READY/BUSY Output
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
DC Don’t Connect
(continued)