(continued)
4 Megabit
(512K x 8)
5-volt Only
CMOS Flash
Memory
Preliminary
Features
•
Single Voltage Operation
- 5V Read
- 5V Reprogramming
•
Fast Read Access Time - 90 ns
•
Internal Program Control and Timer
•
16K bytes Boot Block With Lockout
•
Fast Erase Cycle Time - 10 seconds
•
Byte By Byte Programming - 50 µs/Byte
•
Hardware Data Protection
•
DATA Polling For End Of Program Detection
•
Low Power Dissipation
- 50 mA Active Current
- 100 µA CMOS Standby Current
•
Typical 10,000 Write Cycles
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
The AT49F040 is a 5-volt-only in-system Flash Memory. Its 4 megabits of memory is
organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvola-
tile CMOS technology, the device offers access times to 90 ns with power dissipation
of just 275 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F040 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F040 is performed by erasing
the entire 4 megabits of memory and then programming on a byte by byte basis. The
byte programming time is a fast 50 µs. The end of a program cycle can be optionally
detected by the DATA polling feature. Once the end of a byte program cycle has been
detected, a new access for a read or program can begin. The typical number of pro-
gram and erase cycles is in excess of 10,000 cycles.
Description
AT49F040
TSOP Top View
Type 1
PLCC Top View
0359C
DIP Top View
AT49F040
4-209