1
Features
• Single Voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time - 55 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (32K, 64K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 10 µs/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49F001(N)(T) is a 5-volt-only in-system reprogrammable Flash Memory. Its 1
megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55
ns with power dissipation of just 275 mW over the commercial temperature range.
Rev. 1008B–07/98
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
AT49F001
AT49F001N
AT49F001T
AT49F001NT
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET RESET
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
* RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2
GND
I/O3 I/O4 I/O5 I/O6
A12 A15 A16 RESET * VCC WE NC
(continued)
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
* RESET
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
*Note: This pin is a DC on the AT49F001N(T).