1
Features
• Low Voltage Operation
–2.7V Read
– 5V Program/Erase
• Fast Read Access Time - 120 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 488K Words (976K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 30 µs/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
–50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized
as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50
µA.
8-Megabit
(512K x 16)
CMOS Flash
Memory
AT49BV8192
AT49BV8192T
AT49LV8192
AT49LV8192T
0978B-A–11/97
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
V
PP
Program/Erase Power
Supply
I/O0 - I/O15
Data
Inputs/Outputs
NC No Connect
SOIC (SOP)
RESET
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O1327
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
WE
I/O5
I/O1225
26
A18
A17
A7
A6
A5
A4
A3
A2
A1
GND
I/O0
I/O8
I/O1
I/O9
I/O2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
VPP
I/O10
I/O3
19
20
21
22
I/O4
VCC23
24
CE
OE
I/O11
A0
TSOP Top View
Type 1
A13
A12
A10
A11
A8
NC
A9
NC
A18
NC
RESET
VPP
WE
NC
1
2
4
3
6
5
10
9
7
8
14
13
11
12
I/O3
I/O11
I/O10
I/O2
I/O12
I/O5
I/O4
VCC
I/O6
I/O13
I/O7
I/O14
I/O15
GND
41
40
38
39
36
35
37
44
42
43
46
45
47
48
33
34
I/O1
I/O9
15
16
A17
A7
A6
20
19 I/O8
I/O0
30
29
31
3217
18
A5
A15
A14
NC
A16
21
22
23
24 25
26
27
28A4
A3
A2
A1
GND
OE
CE
A0
(continued)