AT49BV4096
器件描述：4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
器件厂商：ATMEL [ATMEL Corporation]
文件大小：176.29KB，共11页
Sponsor by e络盟器件资料摘要：
4-Megabit
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
Features
•
Low Voltage Operation
- 2.7V Read
- 5V Program/Erase
•
Fast Read Access Time - 120 ns
•
Internal Erase/Program Control
•
Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
•
Fast Sector Erase Time - 10 seconds
•
Word-By-Word Programming - 10 µs/Word
•
Hardware Data Protection
•
DATA Polling For End Of Program Detection
•
Low Power Dissipation
- 25 mA Active Current
- 50 µA CMOS Standby Current
•
Typical 10,000 Write Cycles
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
VPP
Program/Erase
Power Supply
I/O0 - I/O15
Data
Inputs/Outputs
NC No Connect
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
Description
(continued)
AT49BV4096/LV4096
A13
A12
A10
A11
A8
NC
A9
NC
NC
NC
RESET
VPP
WE
NC
1
2
4
3
6
5
10
9
7
8
14
13
11
12
I/O3
I/O11
I/O10
I/O2
I/O12
I/O5
I/O4
VCC
I/O6
I/O13
I/O7
I/O14
I/O15
GND
41
40
38
39
36
35
37
44
42
43
46
45
47
48
33
34
I/O1
I/O9
15
16
A17
A7
A6
20
19 I/O8
I/O0
30
29
31
3217
18
A5
A15
A14
NC
A16
21
22
23
24 25
26
27
28A4
A3
A2
A1
GND
OE
CE
A0
TSOP Top View
Type 1
RESET
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O1327
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
WE
I/O5
I/O1225
26
NC
A17
A7
A6
A5
A4
A3
A2
A1
GND
I/O0
I/O8
I/O1
I/O9
I/O2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
VPP
I/O10
I/O3
19
20
21
22
I/O4
VCC23
24
CE
OE
I/O11
A0
SOIC (SOP)
0874A–5/97
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
Features
•
Low Voltage Operation
- 2.7V Read
- 5V Program/Erase
•
Fast Read Access Time - 120 ns
•
Internal Erase/Program Control
•
Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
•
Fast Sector Erase Time - 10 seconds
•
Word-By-Word Programming - 10 µs/Word
•
Hardware Data Protection
•
DATA Polling For End Of Program Detection
•
Low Power Dissipation
- 25 mA Active Current
- 50 µA CMOS Standby Current
•
Typical 10,000 Write Cycles
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
VPP
Program/Erase
Power Supply
I/O0 - I/O15
Data
Inputs/Outputs
NC No Connect
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
Description
(continued)
AT49BV4096/LV4096
A13
A12
A10
A11
A8
NC
A9
NC
NC
NC
RESET
VPP
WE
NC
1
2
4
3
6
5
10
9
7
8
14
13
11
12
I/O3
I/O11
I/O10
I/O2
I/O12
I/O5
I/O4
VCC
I/O6
I/O13
I/O7
I/O14
I/O15
GND
41
40
38
39
36
35
37
44
42
43
46
45
47
48
33
34
I/O1
I/O9
15
16
A17
A7
A6
20
19 I/O8
I/O0
30
29
31
3217
18
A5
A15
A14
NC
A16
21
22
23
24 25
26
27
28A4
A3
A2
A1
GND
OE
CE
A0
TSOP Top View
Type 1
RESET
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O1327
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
WE
I/O5
I/O1225
26
NC
A17
A7
A6
A5
A4
A3
A2
A1
GND
I/O0
I/O8
I/O1
I/O9
I/O2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
VPP
I/O10
I/O3
19
20
21
22
I/O4
VCC23
24
CE
OE
I/O11
A0
SOIC (SOP)
0874A–5/97