1
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
AccessTime–70ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 300 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
–30mAActive
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
Pin Configurations
Pin Name Function
A0 - A19 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
RDY/BUSY READY/BUSY Output
VPP Power Supply for Accelerated Program/Erase Operations
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1) I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
VCCQ Output Power Supply
16-megabit
(1Mx16/2Mx8)
3-volt Only
Flash Memory
AT49BV1604A
AT49BV1604AT
AT49BV1614A
AT49LV1614A
AT49BV1614AT
AT49LV1614AT
Rev. 1411F–FLASH–03/02