1
Features
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µs/Byte typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
–50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV020 and the AT49LV020 are 3-volt-only, 2 megabit Flash memories
organized as 262,144 words of 8 bits each. Manufactured with Atmel's advanced non-
volatile CMOS technology, the devices offer access times to 70 ns with power dissipa-
tion of just 90 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV/LV020 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV/LV020 is performed by eras-
ing the entire 2 megabits of memory and then programming on a byte by byte basis.
The typical byte programming time is a fast 30 µs. The end of a program cycle can be
optionally detected by the DATA polling feature. Once the end of a byte program cycle
has been detected, a new access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000 cycles.
2-Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
™

Flash Memory
AT49BV020
AT49LV020
Rev. 0678C–03/98
(continued)
Pin Configuration
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
PLCC Top View
VSOP Top View (8 x 14mm) or
TSOP Top View (8 x 20mm)
Type 1