1
Features
• Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time - 110 ns
• Internal Program Control and Timer
• 16K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte-By-Byte Programming - 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
–50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV/LV008 is a 3-volt-only in-system Flash Memory device. Its 8 megabits of
memory is organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s
advanced nonvolatile CMOS technology, the device offers access times to 110 ns
with power dissipation of just 90 mW over the commercial temperature range. When
the device is deselected, the CMOS standby current is less than 50 µA.
8-Megabit
(1M x 8)
3-volt Only
Flash Memory
AT49BV008
AT49LV008
Rev. 1043A–03/98
Pin Configurations
Pin Name Function
A0 - A19 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
RDY/BUSY Ready/Busy Output
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
(continued)
TSOP Top VIew
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A16
A15
A14
A13
A12
A11
A9
A8
WE
RESET
NC
RDY/BUSY
A18
A7
A6
A5
A4
A3
A2
A1
A17
GND
NC
A19
A10
I/O7
I/O6
I/O5
I/O4
VCC
VCC
NC
I/O3
I/O2
I/O1
I/O0
OE
GND
CE
A0
AT49BV/LV008
8-Megabit 1M x
8 3-volt Only