AT29LV512
512K (64K x 8)
3-volt Only
CMOS Flash
Memory
Features
•
Single Supply Voltage, Range 3V to 3.6V
•
3-Volt-Only Read and Write Operation
•
Software Protected Programming
•
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
•
Fast Read Access Time - 200 ns
•
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
•
Fast Sector Program Cycle Time - 20 ms Max.
•
Internal Program Control and Timer
•
DATA Polling for End of Program Detection
•
Typical Endurance > 10,000 Cycles
•
CMOS and TTL Compatible Inputs and Outputs
•
Commercial and Industrial Temperature Ranges
Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 20 µA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
(continued)
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
TSOP Top View
Type 1
PLCC Top View
0177I
AT29LV512
4-43