2 Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage

CMOS Flash
Memory
Features
•
Single Supply Voltage, Range 2.7V to 3.6V
•
Single Supply for Read and Write
•
Software Protected Programming
•
Fast Read Access Time - 250 ns
•
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
•
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
•
Two 8 KB Boot Blocks with Lockout
•
Fast Sector Program Cycle Time - 20 ms Max.
•
Internal Program Control and Timer
•
DATA Polling for End of Program Detection
•
Typical Endurance > 10,000 Cycles
•
CMOS and TTL Compatible Inputs and Outputs
•
Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
Low Voltage Flash family of products.
(continued)
AT29BV020
TSOP Top View

Type 1
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
PLCC Top View
0402B
AT29BV020
4-13