AT28LV64B
64K (8K x 8)
Low Voltage
CMOS
E
2
PROM with
Page Write and
Software Data
Protection
Features
•
Single 3.3V ± 10% Supply
•
3-Volt-Only Read and Write Operation
•
Software-Protected Programming
•
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
•
Fast Read Access Time − 200 ns
•
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
•
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
•
DATA Polling for End of Write Detection
•
High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
•
JEDEC Approved Byte-Wide Pinout
•
Commercial and Industrial Temperature Ranges
PDIP, SOIC
Top View
Pin Name Function
A0 - A12 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
TSOP
Top View
Description
The AT28LV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-
lected, the CMOS standby current is less than 20 µA.
The AT28LV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
(continued)
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
PLCC
Top View
0299C
AT28LV64B
2-135