AT28LV256
256K (32K x 8)
Low Voltage
CMOS
E
2
PROM
Features
•
Fast Read Access Time - 200 ns
•
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
•
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
•
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
•
Hardware and Software Data Protection
•
DATA Polling for End of Write Detection
•
High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
•
Single 3.3V ± 5% Supply
•
JEDEC Approved Byte-Wide Pinout
•
Commercial and Industrial Temperature Ranges
Description
The AT28LV256 is a high-performance Electrically Erasable and Programmable
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 200 µA.
The AT28LV256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to
(continued)
PDIP, SOIC
Top View
Pin Name Function
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
TSOP
Top View
0273E
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
PLCC
Top View
AT28LV256
2-145