AT28C16-T
16K (2K x 8)
PCMCIA
Nonvolatile
Attribute
Memory
TSOP
Top View
Pin Name Function
A0 - A10 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
RDY/BSY Ready/Busy Output
NC No Connect
Pin Configurations
Features
•
Ideal Rewriteable Attribute Memory
•
Simple Write Operation
Self-Timed Byte Writes
On-chip Address and Data Latch for SRAM-like Write Operation
Fast Write Cycle Time - 1 ms
5-Volt-Only Nonvolatile Writes
•
End of Write Detection
RDY/BUSY Output
DATA Polling
•
High Reliability
Endurance: 100,000 Write Cycles
Data Retention: 10 Years Minimum
•
Single 5-Volt Supply for Read and Write
•
Very Low Power
30 mA Active Current
100 µA Standby Current
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only
byte writeable nonvolatile memory (E
2
PROM). Standby current is typically less than
100 µΑ. The AT28C16-T is written like a Static RAM, eliminating complex program-
ming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration
in-system. Data retention is specified as 10 years minimum, precluding the necessity
for batteries. Three access times have been specified to allow for varying layers of
buffering between the memory and the PCMCIA interface.
The AT28C16-T is accessed like a Static RAM for read and write operations. During
a byte write, the address and data are latched internally. Following the initiation of a
write cycle, the device will go to a busy state and automatically write the latched data
using an internal control timer. The device provides two methods for detecting the end
of a write cycle; the RDY/BUSY output and DATA POLLING of I/O
7
.
0285C
AT28C16-T
2-175