1
LCC
Top View
Features
• Read Access Time - 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 256 Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (E
2
PROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
Rev. 0542B–04/98
AT28C040 4-
Megabit (512K x
8) Paged
E
2
PROM
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
SIDE BRAZE,
FLATPACK
To p V i ew
(continued)
4-Megabit
(512K x 8)
Paged E
2
PROM
AT28C040