AT28C010 Com/Ind
1 Megabit
(128K x 8)
Paged
CMOS
E
2
PROM
Commercial
and
Industrial
Features
•
Fast Read Access Time - 120 ns
•
Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
•
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
•
Low Power Dissipation
40 mA Active Current
200 µA CMOS Standby Current
•
Hardware and Software Data Protection
•
DATA Polling for End of Write Detection
•
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
•
Single 5V ± 10% Supply
•
CMOS and TTL Compatible Inputs and Outputs
•
JEDEC Approved Byte-Wide Pinout
•
Commercial and Industrial Temperature Ranges
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200 µA.
(continued)
PDIP
Top View
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7
Data
Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
TSOP
Top View
PLCC
Top View
Note: PLCC package pin 1
is a DON’T CONNECT.
0353C
AT28C010 Com/Ind
2-231