AT28BV16
器件描述：16K 2K x 8 Battery-Voltage CMOS E2PROM
器件厂商：ATMEL [ATMEL Corporation]
文件大小：398.08KB，共8页
Sponsor by e络盟器件资料摘要：
AT28BV16
16K (2K x 8)
Battery-Voltage
CMOS
E
2
PROM
Features
•
2.7 to 3.6V Supply
Full Read and Write Operation
•
Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
•
Read Access Time - 250 ns
•
Byte Write - 3 ms
•
Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
•
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
•
Low Voltage CMOS Compatible Inputs and Outputs
•
JEDEC Approved Byte Wide Pinout
•
Commercial and Industrial Temperature Ranges
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
(continued)
PLCC
Top View
PDIP, SOIC
Top View
Pin Name Function
A0 - A10 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
TSOP
Top View
0308A
AT28BV16
2-119
16K (2K x 8)
Battery-Voltage
CMOS
E
2
PROM
Features
•
2.7 to 3.6V Supply
Full Read and Write Operation
•
Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
•
Read Access Time - 250 ns
•
Byte Write - 3 ms
•
Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
•
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
•
Low Voltage CMOS Compatible Inputs and Outputs
•
JEDEC Approved Byte Wide Pinout
•
Commercial and Industrial Temperature Ranges
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
(continued)
PLCC
Top View
PDIP, SOIC
Top View
Pin Name Function
A0 - A10 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
TSOP
Top View
0308A
AT28BV16
2-119