Semiconductor Group 1 Nov-26-1996
BCR 10PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R
1
=10kΩ, R
2
=10kΩ)
Tape loading orientation
Type Marking Ordering Code Pin Configuration Package
BCR 10PN W1s Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
10
Input on Voltage V
i(on)
20
DC collector current I
C
100 mA
Total power dissipation, T
S
= 115°C P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 275 K/W
Junction - soldering point R
thJS
≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu