2SK1817-M N-channel MOS-FET
F-III Series 100V 0,08Ω 20A 40W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 100 V
Continous Drain Current I D 20 A
Pulsed Drain Current I D(puls) 80 A
Continous Reverse Drain Current I DR 20 A
Gate-Source-Voltage V GS ±20 V
Max. Power Dissipation P D 40 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 100 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 1,0 1,5 2,5 V
Zero Gate Voltage Drain Current I DSS V DS =100V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±20V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =10A V GS =4V 0,070 0,120 Ω
I D =10A V GS =10V 0,053 0,080 Ω
Forward Transconductance g fs I D =10A V DS =25V 10 20 S
Input Capacitance C iss V DS =25V 1850 2780 pF
Output Capacitance C oss V GS =0V 400 600 pF
Reverse Transfer Capacitance C rss f=1MHz 120 180 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =30V 5 8 ns
t r I D =20A 50 75 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 350 530 ns
t f R GS =25 Ω 100 150 ns
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,22 1,83 V
Reverse Recovery Time t rr I F =I DR V GS =0V 70 ns
-dI F /d t =100A/µs T ch =25°C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 62,5 °C/W
R th(ch-c) channel to case 3,125 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56