4-183
Up to 4 GHz Linear Power
Silicon␣ Bipolar Transistor
Technical Data
Features
• High Output Power:
27.5 dBm Typical P
1 dB
at 2.0␣ GHz
26.5 dBm Typical P
1 dB
at 4.0␣ GHz
• High Gain at 1 dB
Compression:
12.5 dB Typical G
1 dB
at 2.0␣ GHz
9.5 dB Typical G
1 dB
at 4.0␣ GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia
Stripline Package
AT-64023
230 mil BeO PackageDescription
The AT-64023 is a high perfor-
mance NPN silicon bipolar
transistor housed in a hermetic
BeO flange package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applica-
tions operating over VHF, UHF
and microwave frequencies.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
5965-8916E