AT-635
器件描述：Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz
器件厂商：MACOM [Tyco Electronics]
厂商主页：http://www.macom.com
文件大小：177.26KB，共2页
Sponsor by e络盟器件资料摘要：
V 3.00
Features
l 35 dB Voltage Variable Attenuation @ 1 GHz
l Single Voltage Control 0 to -4 Volts
l Low DC Power Consumption: 10 mW
l Nanosecond Switching Speed
l Temperature Range: -40˚C to +85˚C
l Low Cost SOIC14 Plastic Package
l Tape and Reel Packaging Available
1
Description
M/A-COM’s AT-635 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 14-lead surface mount plastic pack-
age. The AT-635 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
re q u i red. Typical applications include radio, cellular, GPS equip-
ment and other Automatic Gain/Level Control circ u i t s .
The AT-635 is fabricated with a monolithic GaAs MMIC using a
m a t u re 1-micron process. The process features full chip passiva-
tion for increased perf o rmance and re l i a b i l i t y .
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB
DC - 2 GHz AT-635
S O - 1 4
Parameter Test Conditions
2
Unit Min. Typ. Max
Insertion Loss DC – 0.1 GHz dB 6.5 6.7
DC – 0.5 GHz dB 6.7 7.0
DC – 1.0 GHz dB 7.2 7.4
DC – 2.0 GHz dB 7.5 7.8
Flatness DC-2 GHz 10 dB Attenuation dB +/-1.0 +/-1.3
(Peak to Peak) 20 dB Attenuation dB +/-1.2 +/-1.5
30 dB Attenuation dB +/-1.2 +/-1.5
VSWR 2.0:1
Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 2
Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 4
Transients In Band mV 30
Power Linear Operation dBm 13
Handling Absolute Max Input Power dBm 21
Measured Relative 0.05 GHz dBm 34
IP
2
to Input Power 0.5 – 2.0 GHz dBm 47
(for two-tone input power up to +5 dBm)
Measured Relative 0.05 GHz dBm 18 31
(3)
IP
3
to Input Power 0.5 – 2.0 GHz dBm 18.5 36
(3)
(for two-tone input power up to +5 dBm)
Electrical Specifications, T
A
= +25°C
1.Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50Ω system, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 µA typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
Ordering Information
Part Number Package
AT-635 PIN SOIC 14-Lead Plastic Package
AT-635TR Forward Tape & Reel
Features
l 35 dB Voltage Variable Attenuation @ 1 GHz
l Single Voltage Control 0 to -4 Volts
l Low DC Power Consumption: 10 mW
l Nanosecond Switching Speed
l Temperature Range: -40˚C to +85˚C
l Low Cost SOIC14 Plastic Package
l Tape and Reel Packaging Available
1
Description
M/A-COM’s AT-635 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 14-lead surface mount plastic pack-
age. The AT-635 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
re q u i red. Typical applications include radio, cellular, GPS equip-
ment and other Automatic Gain/Level Control circ u i t s .
The AT-635 is fabricated with a monolithic GaAs MMIC using a
m a t u re 1-micron process. The process features full chip passiva-
tion for increased perf o rmance and re l i a b i l i t y .
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB
DC - 2 GHz AT-635
S O - 1 4
Parameter Test Conditions
2
Unit Min. Typ. Max
Insertion Loss DC – 0.1 GHz dB 6.5 6.7
DC – 0.5 GHz dB 6.7 7.0
DC – 1.0 GHz dB 7.2 7.4
DC – 2.0 GHz dB 7.5 7.8
Flatness DC-2 GHz 10 dB Attenuation dB +/-1.0 +/-1.3
(Peak to Peak) 20 dB Attenuation dB +/-1.2 +/-1.5
30 dB Attenuation dB +/-1.2 +/-1.5
VSWR 2.0:1
Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 2
Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 4
Transients In Band mV 30
Power Linear Operation dBm 13
Handling Absolute Max Input Power dBm 21
Measured Relative 0.05 GHz dBm 34
IP
2
to Input Power 0.5 – 2.0 GHz dBm 47
(for two-tone input power up to +5 dBm)
Measured Relative 0.05 GHz dBm 18 31
(3)
IP
3
to Input Power 0.5 – 2.0 GHz dBm 18.5 36
(3)
(for two-tone input power up to +5 dBm)
Electrical Specifications, T
A
= +25°C
1.Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50Ω system, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 µA typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
Ordering Information
Part Number Package
AT-635 PIN SOIC 14-Lead Plastic Package
AT-635TR Forward Tape & Reel