4-164
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
• High Output Power:
21.0 dBm Typical P
1 dB
at 2.0␣ GHz
20.5 dBm Typical P
1 dB
at 4.0␣ GHz
• High Gain at 1 dB
Compression:
15.0 dB Typical G
1 dB
at 2.0␣ GHz
10.0 dB Typical G
1 dB
at 4.0␣ GHz
• Low Noise Figure:
1.9 dB Typical NF
O
at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
• Hermetic Gold-ceramic
Microstrip Package
AT-42070
70 mil Package
Description
Hewlett-Packard’s AT-42070 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42070 is housed in a hermetic,
high reliability gold-ceramic 70 mil
microstrip package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50␣ Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42070 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T

Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8912E