4-149
Up to 6 GHz Medium Power
Silicon Bipolar Transistor Chip
Technical Data
Features
• High Output Power:
21.0 dBm Typical P
1 dB
at 2.0␣ GHz
20.5 dBm Typical P
1 dB
at 4.0␣ GHz
• High Gain at 1 dB
Compression:
15.0 dB Typical G
1 dB
at 2.0␣ GHz
10.0 dB Typical G
1 dB
at 4.0␣ GHz
• Low Noise Figure: 1.9 dB
Typical NF
O
at 2.0 GHz
• High Gain-Bandwidth
Product: 9.0 GHz Typical f
T
AT-42000
Chip Outline
Description
Hewlett-Packard’s AT-42000 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that
are easy to match for low noise
and medium power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50 Ω up to 1 GHz ,
makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T

Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
The recommended assembly
procedure is gold-eutectic die
attach at 400
o
C and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
“Chip Use”.
5965-8909E