4-89
4.8 V NPN Silicon Bipolar
Common␣ Emitter Transistor
Technical Data
Features
• 4.8 Volt Pulsed
(pulse width = 577 µsec,
duty cycle = 12.5%)/CW
Operation
• +28 dBm Pulsed P
out
@␣ 900␣ MHz, Typ.
• +23.5 dBm CW P
out
@␣ 836.5␣ MHz, Typ.
• 60% Pulsed Collector
Efficiency @ 900 MHz, Typ.
• 11 dB Pulsed Power Gain
@␣ 900 MHz, Typ.
• -35 dBc IMD
3
@ P
out
of
17␣ dBm per tone, 900 MHz,
Typ.
Applications
• Driver Amplifier for GSM
and AMPS/ETACS/ 900 MHz
NMT Cellular Phones
• 900 MHz ISM and Special
Mobile Radio
AT-38086
Description
Hewlett Packard’s AT-38086 is a
low cost, NPN silicon bipolar
junction transistor housed in a
surface mount plastic package.
This device is designed for use as
a pre-driver or driver device in
applications for cellular and
wireless communications
markets. At 4.8 volts, the
AT-38086 features +28 dBm pulsed
output power, Class AB operation,
and +23.5␣ dBm CW. Superior
efficiency and gain makes the
AT-38086 an excellent choice for
battery powered systems.
The AT-38086 is fabricated with
Hewlett Packard’s 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
85 mil Plastic Surface
Mount Package
Outline 86
Pin Configuration
4
EMITTER
1
BASE
3
COLLECTOR
2
EMITTER
5965-5959E