A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS T
C
= 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA 30 V
BV
CBO
I
C
= 100 µA 50 V
BV
EBO
I
E
= 100 µA 5.0 V
I
CEO
V
CE
= 28 V 100 µA
h
FE
V
CE
= 15 V I
C
= 50 mA 30 300 ---
f
t
V
CE
= 15 V I
C
= 50 mA 1500 1800 MHz
C
ob
V
CB
= 30 V f = 100 KHz 2.5 3.5 pF
C
ib
V
EB
= 0.5 V f = 100 KHz 8.0 10 pF
NF
NB
V
CE
= 10 V I
C
= 10 mA f = 2000 MHz 2.7 dB
NF
BB
V
CE
= 15 V I
C
= 50 mA f = 216 MHz 7.0 8.0 dB
G
VE
V
CE
= 15 V I
C
= 50 mA f = 216 MHz 7.2 6.8 dB
X
MOD
V
CE
= 15 V I
C
= 50 mA P
out
= +45 dbmV -60 -57 dB
2
NDO
V
CE
= 15 V I
C
= 50 mA P
out
= +45 dbmV -60 -50 dB

NPN SILICON HIGH FREQUENCY TRANSISTOR
SD1006

DESCRIPTION:
The ASI SD1006 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CEO
30 V
V
CBO
50 V
P
DISS
3.5 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
50 °C/W
PACKAGE STYLE TO-39


1 = EMITTER 2 = BASE
3 = COLLECTOR