ASI10632
器件描述:NPN SILICON RF POWER TRANSISTOR
文件大小:17.89KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS T C = 25 O C
SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 1 mA 50 V
BV CEO I C = 5 mA 20 V
BV EBO I E = 1 mA 3.5 V
I CEO V CE = 1 8 V 1.0 mA
h FE V CE = 5.0 V I C = mA 15 120 ---
C
OB V CB = 28 V f = 1.0 MHz 5.0 pF
P G V CE = 18 V P OUT = 1.0 W f = 2.0 GHz I
CQ = 220 mA
7.0 dB
NPN SILICON RF POWER TRANSISTOR
MLN2030F
DESCRIPTION:
The ASI MLN2030F is Designed for
FEATURES:
•
•
• Omnigold ™ Metalization System
MAXIMUM RATINGS
I C 500 mA
V CE 20 V
P DISS --- W
T J - 65 O C to +200 O C
T STG - 65 O C to +200 O C
θJC 17.0 O C/W
PACKA GE STYLE .250 2L F LG
ORDER CODE: ASI10632
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H .560 / 14.22 .570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I J
K
H F
B
E
C
ØD
A
NM P
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18