A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS T C = 25 O C

SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 5 mA 45 V
BV CER I C = 15 mA R BE = 10 Ω 45 V
BV EBO I E = 1 mA 3.5 V
I CBO V CB = 28 V 5.0 mA
h FE V CE = 5.0 V I C = 1000 mA 15 120 ---
C
ob V CB = 28 V f = 1.0
MHz
19 pF
P
G
ηC
V CC = 28 V P OUT = 20 W f = 1.0 GHz 10
50
dB
%

NPN SILICON RF POWER TRANSISTOR
ASI1020
DESCRIPTION:
The ASI 1020 is Designed for General
Purpose Class C Power Amplifier
Applications up to 1500 MHz.

FEATURES:
• P G = 10 dB min.at 20 W / 1,000 M Hz
• Hermetic Microstrip Package
• Omnigold ™ Metalization System
MAXIMUM RATINGS
I C 1.50 A
V CC 35 V
P DISS 35 W @ T C = 25 O C
T J - 65 O C to +200 O C
T STG - 65 O C to +200 O C
θJC 5.0 O C/W
PACKAGE STYLE .250 2L FLG


















ORDER CODE: ASI10526
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm

.117 / 2.97
H .560 / 14.22 .570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I J
K
H F
B
E
C
ØD
A
NM P
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18