A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS T C = 25 O C
SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 3.0 mA 45 V
BV CEO I C = 3.0 mA 12 V
BV EBO I E = 3.0 mA 3.5 V
h FE V CE = 5.0 V I C = 600 mA 15 150 ---
C
OB V CB = 28 V f = 1.0 MHz 7.0 pF
P
G
ηC V CC = 28 V P OUT = 10 W f = 1.65 GHz
11
45
dB
%

NPN SILICON RF POWER TRANSISTOR
ASAT10
DESCRIPTION:
The ASI ASAT10 is Designed for

FEATURES:
• Input Matching Network
•
• Omnigold ™ Metalization System
MAXIMUM RATINGS
I C 2.3 A
V CBO 45 V
V CEO 15 V
V EBO 3.5 V
P DISS 29 W @ T C = 25 O C
T J - 65 O C to +200 O C
T STG - 65 O C to +150 O C
θJC 6. 0 O C/W
PACKAGE STYLE .250 2 L FLG(A)


















ORDER CODE: ASI10517
MINIMUM
inches / mm
.055 / 1.40
.635 / 16.13
.124 / 3.15
.243 / 6.17
.739 / 18.77
B
C
D
E
F
G
A
MAXIMUM
.253 / 6.43
.749 / 19.02
.665 / 16.89
inches / mm
.065 / 1.65
H .002 / 0.05 .006 / 0.15
DIM
K
L
I
J
.055 / 1.40
.075 / 1.91
.245 / 6.22
.065 / 1.65
.095 / 2.41
.255 / 6.48
.315 / 8.00 .325 / 8.26
.190 / 4.83
KJI
L
M
B
.050 x 45°
Ø .130 NOM.
H
G
F
E
C D
.020 x 45° A
.555 / 14.10 .565 / 14.35
M .092 / 2.34