5-29
0.5–12 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• Low Bias:
V
DS
= 2 V, I
DS

= 25␣ mA
• High Output Power:
20.0␣ dBm typical P
1 dB
at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
[1]
ATF-10736
36 micro-X PackageDescription
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, T
A
= 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA f = 2.0 GHz dB 0.9
f = 4.0 GHz dB 1.2 1.4
f = 6.0 GHz dB 1.4
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA f = 2.0 GHz dB 16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 10.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
V
DS
= 4 V, I
DS
= 70 mA
G
1 dB
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA f = 4.0 GHz dB 12.0
g
m
Transconductance: V
DS
= 2 V, V
GS
= 0 V mmho 70 140
I
DSS
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V m A 70 130 180
V
P
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA V -4.0 -1.3 -0.5
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8698E