V
CES
Collector-to-Emitter Voltage 600 V
I
C
Continuos Collector Current @ T
C
= 25°C 100 A
@ T
C
= 122°C 50
I
CM
Pulsed Collector Current 200
I
LM
Peak Switching Current 200
I
F
Diode Continuous Forward Current @ T
C
= 100°C 48
I
FM
Peak Diode Forward Current 200
V
GE
Gate-to-Emitter Voltage ± 20 V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
P
D
Maximum Power IGBT @ T
C
= 25°C 445 W
Dissipation @ T
C
= 100°C 175
Diode @ T
C
= 25°C 205
@ T
C
= 100°C 83
1
50MT060ULS
I27123 rev. C 02/03
V
CES
= 600V
I
C
= 100A,
T
C
= 25°C
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT
Absolute Maximum Ratings
Parameters Max Units
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED
TM
Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
Features
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Benefits
www.irf.com
MMTP