2SK3408
器件描述：N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
器件厂商：NEC [NEC]
文件大小：62.02KB，共8页
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2000
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15016EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3408 SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 43±5V
Drain to Gate Voltage (VGS = 0 V) VDGS 43±5V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±1.0 A
Drain Current (pulse)
Note1
ID(pulse) ±4.0 A
Total Power Dissipation (TC = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C)
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1 2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –
0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XF
Gate
Drain
The mark a35 shows major revised points.
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2000
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15016EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3408 SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 43±5V
Drain to Gate Voltage (VGS = 0 V) VDGS 43±5V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±1.0 A
Drain Current (pulse)
Note1
ID(pulse) ±4.0 A
Total Power Dissipation (TC = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C)
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1 2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –
0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XF
Gate
Drain
The mark a35 shows major revised points.