2N6342
器件描述：TRIACS Silicon Bidirectional Triode Thyristors
器件厂商：MOTOROLA [Motorola, Inc]
文件大小：114.76KB，共6页
Sponsor by e络盟器件资料摘要：
1
Motorola Thyristor Device Data
C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
• For 400 Hz Operation, Consult Factory
• 12 Ampere Devices Available as 2N6342A thru 2N6349A
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage
(1)
(Gate Open, T
J
= –40 to +110°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open 2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
V
DRM
200
400
600
800
Volts
*RMS On-State Current (T
C
= +80°C)
Full Cycle Sine Wave 50 to 60 Hz (T
C
= +90°C)
I
T(RMS)
8
4
Amps
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T
C
= +80°C)
Preceded and followed by Rated Current
I
TSM
100 Amps
Circuit Fusing
(t = 8.3 ms)
I
2
t 40 A
2
s
*Peak Gate Power (T
C
= +80°C, Pulse Width = 2 µs) P
GM
20 Watts
*Average Gate Power (T
C
= +80°C, t = 8.3 ms) P
G(AV)
0.5 Watt
*Peak Gate Current I
GM
2 Amps
*Peak Gate Voltage V
GM
10 Volts
*Operating Junction Temperature Range T
J
–40 to +125 °C
*Storage Temperature Range T
stg
–40 to +150 °C
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Order this document
by 2N6342/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
C0050C0078C0054C0051C0052C0050
C0116C0104C0114C0117
C0050C0078C0054C0051C0052C0057
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
Motorola Thyristor Device Data
C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
• For 400 Hz Operation, Consult Factory
• 12 Ampere Devices Available as 2N6342A thru 2N6349A
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage
(1)
(Gate Open, T
J
= –40 to +110°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open 2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
V
DRM
200
400
600
800
Volts
*RMS On-State Current (T
C
= +80°C)
Full Cycle Sine Wave 50 to 60 Hz (T
C
= +90°C)
I
T(RMS)
8
4
Amps
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T
C
= +80°C)
Preceded and followed by Rated Current
I
TSM
100 Amps
Circuit Fusing
(t = 8.3 ms)
I
2
t 40 A
2
s
*Peak Gate Power (T
C
= +80°C, Pulse Width = 2 µs) P
GM
20 Watts
*Average Gate Power (T
C
= +80°C, t = 8.3 ms) P
G(AV)
0.5 Watt
*Peak Gate Current I
GM
2 Amps
*Peak Gate Voltage V
GM
10 Volts
*Operating Junction Temperature Range T
J
–40 to +125 °C
*Storage Temperature Range T
stg
–40 to +150 °C
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Order this document
by 2N6342/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
C0050C0078C0054C0051C0052C0050
C0116C0104C0114C0117
C0050C0078C0054C0051C0052C0057
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2