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AS202-321

器件描述:PHEMT GaAs IC High Power SP3T Switch DC-2 GHz
器件厂商:ALPHA [Alpha Industries]
文件大小:83.33KB,共2页
Sponsor by e络盟
器件资料摘要:
Alpha Industries, Inc. [781] 935-5150 • Fax [978] 241-7906 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 8/01A
PHEMT GaAs IC High Power
SP3T Switch DC–2 GHz
Features
■ Positive Low Voltage Control
(0/2.75 V Operation)
■ Low Insertion Loss (< 0.6 dB @ 2 GHz)
■ High Isolation (30 dB at 1 and 2 GHz)
■ Excellent Harmonics Performance
(65 dBc @ 2.75 V 1 GHz P
IN
= 34 dBm)
■ Miniature MLP-12 Plastic Package
■ PHEMT Process
MLP-12
AS202-321
0.008 (0.20 mm)
SEATING PLANE
0.118 (3.00 mm)
PIN 1
INDICATOR
PIN 1
INDICATOR
0.118
(3.00 mm)
0.001
(0.02 mm)
0.030
(0.75 mm)
± 0.002
(0.05 mm)
EXPOSED
PAD
0.029
(0.73 mm)
0.0196
(0.50 mm) BSC
0.057 (1.45 mm) SQ.
+ 0.004 (0.10 mm)
- 0.006 (0.15 mm)
0.009 (0.23 mm)
+ 0.003 (0.07 mm)
- 0.002 (0.05 mm)
Description
The AS202-321 is a PHEMT GaAs IC SP3T antenna
switch operating in the 900 MHz and 1800 MHz
frequency bands. Switching between the antenna and
T
X
/R
X
ports is accomplished with 3 control inputs. When
the control inputs are driven with the appropriate voltages,
a low insertion loss path is provided from an antenna
port to an R
X
or T
X
port, while the other ports have
high attenuation.
Parameter Frequency Min. Typ. Max. Unit
Insertion Loss Ant-RF1, RF2, RF3 0.1–0.5 GHz 0.55 0.75 dB
0.5–1.0 GHz 0.60 0.80 dB
1.0–2.0 GHz 0.80 1.10 dB
Isolation Ant-RF1, RF2, RF3 0.1–0.5 GHz 25 28 dB
0.5–1.0 GHz 22 25 dB
1.0–2.0 GHz 22 25 dB
Return Loss Ant-RF1, RF2, RF3 0.1–0.5 GHz 18 dB
0.5–1.0 GHz 18 dB
1.0–2.0 GHz 14 dB
Electrical Specifications at 25°C (0, +2.75 V)
Preliminary
Parameter Condition Frequency Min. Typ. Max. Unit
2nd Harmonic 34 dBm In @ 2.75 V 1 GHz 72 dBc
3rd Harmonic 34 dBm In @ 2.75 V 1 GHz 65 dBc
2nd Harmonic 32 dBm In @ 2.75 V 2 GHz 70 dBc
3rd Harmonic 32 dBm In @ 2.75 V 2 GHz 65 dBc
Gate Leakage Current 34 dBm In @ 2.75 V 0.030 mA
Control Voltages V
High
-0.25 0 0.25 V
V
Low
2.60 2.75 5.00 V
Operating Characteristics at 25°C (0, +2.75 V)