AS192-300
器件描述:PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz
文件大小:28.84KB,共2页
Sponsor by e络盟
器件资料摘要:
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 2/01A
PHEMT GaAs IC High Power
SP4T Switch 0.1–2.5 GHz
Features
a73 4 Symmetric RF Paths
a73 Positive Voltage Control
a73 High IP3
a73 Excellent Harmonic Performance
a73 Handles GSM Power Levels
a73 Available in MLF-16 (4 x 4 mm) Package
MLF-16 (4 x 4 mm)
AS192-300
12˚
MAX.
0.148
(3.75 mm)
BSC
PIN 1
INDICATOR 16
1
2
3
0.157
(4.00 mm)
BSC
0.157 (4.00 mm) BSC
0.148
(3.75 mm)
BSC
SEATING
PLANE
0.001
(0.025 mm)
± 0.001
(0.025 mm)
0.039 (1.00 mm) MAX.
0.067 (1.70 mm)
± 0.006 (0.15 mm) 16
0.026 (0.65 mm) BSC
0.078 (1.95 mm) REF.
1
2 0.078
(1.95 mm) REF.
3
0.067 (1.70 mm)
± 0.006 (0.15 mm)
Description
The AS192-300 is a reflective SP4T switch. It is an ideal
switch for higher power applications. It can be used for
GSM dual band handset applications where both low loss,
low current and small size are critical parameters.
Parameter Frequency Min. Typ. Max. Unit
Insertion Loss Ant-J
1
, J
2
, J
3
, J
4
0.1–0.5 GHz 0.90 1.1 dB
0.5–1.0 GHz 0.95 1.1 dB
1.0–2.0 GHz 1.00 1.2 dB
2.0–2.5 GHz 1.10 1.3 dB
Isolation Ant-J
1
, J
2
, J
3
, J
4
0.1–0.5 GHz 30 34 dB
0.5–1.0 GHz 25 29 dB
1.0–2.0 GHz 19 23 dB
2.0–2.5 GHz 18 21 dB
VSWR 0.1–1.0 GHz 1.3:1
1.0–2.5 GHz 1.4:1
Electrical Specifications at 25°C (0, +4.5 V)
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 50 ns
On, Off (50% CTL to 90/10% RF) 100 ns
Video Feedthru 50 mV
IP3 13 dBm/Tone +55 dBm
2nd and 3rd Harmonics 34 dBm Input 900 MHz +65 dBc
Control Voltages V
Low
= 0
V
High
= +4.5 V @ 200 µA Max. for RF power > 30 dBm
V
High
= +3.0 V @ 200 µA Max. for RF power 20–30 dBm
V
High
= +2.7 V @ 200 µA Max. for RF power < 20 dBm
Operating Characteristics at 25°C (0, +4.5 V)