AS165-59
器件描述：GaAs IC High Isolation SPST Switch Positive Control 0.7?2.5 GHz
器件厂商：SKYWORKS [Skyworks Solutions Inc.]
文件大小：438.15KB，共2页
Sponsor by e络盟器件资料摘要：
Skyworks Solutions, Inc. [781] 376-3000 • Fax [781] 376-3100 • Email sales@skyworksinc.com • www.skyworksinc.com 1
Specifications subject to change without notice. 10/99A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
4
Rise, Fall (10/90% or 90/10% RF) 25 ns
On, Off (50% CTL to 90/10% RF) 150 ns
Video Feedthru 50 mV
Input Power for 1 dB Compression 0.7–2.5 GHz +28 dBm
Intermodulation Intercept Point (IP3) For Two-tone Input Power +5 dBm 0.7–2.5 GHz +45 dBm
Control Voltages V
Low
= 0 to 0.2 V @ 20 µA Max.
V
High
= +5 V @ 50 µA Max. to +7 V @ 200 µA Max.
V
S
= V
High
± 0.2 V
GaAs IC High Isolation SPST Switch
Positive Control 0.7–2.5 GHz
Features
■ Single Positive Control Voltage (0, +5 V)
■ Base Station Synthesizer Switch
■ High Isolation (45 dB @ 0.9, 1.9 GHz)
■ J
1
Port Non-Reflective
■ Miniature Low Cost MSOP-8
Plastic Package
MSOP-8
AS165-59
Description
The AS165-59 SPST IC FET switch is absorptive on the
input.The switch features high isolation and low insertion
loss. Ideal building block for base station applications
where synthesizer isolation is critical. Use in conjunction
with the AS164-80 SPDT switch to meet GSM synthesizer
switch isolation requirements.
Parameter
1
Frequency Min. Typ. Max. Unit
Insertion Loss
2
0.7–1.0 GHz 0.7 0.9 dB
1.0–2.0 GHz 0.8 1.1 dB
2.0–2.5 GHz 1.2 1.4 dB
Isolation 0.7–2.0 GHz 39 45 dB
2.0–2.5 GHz 30 38 dB
VSWR
3
0.7–1.8 GHz 1.7:1 1.9:1
1.8–2.5 GHz 1.5:1 1.8:1
Electrical Specifications at 25°C (0, +5 V)
0.012 (0.30 mm)
PIN 1
PIN 1
INDICATOR
+ 0.006 (0.15 mm)
7.0˚
TYP.
0.038 (0.95 mm)
0.030 (0.75 mm) 0.017
(0.43 mm)
8.0˚
MAX.
0.028 (0.70 mm)
0.016 (0.40 mm)
0.007 (0.18 mm)
± 0.005 (0.12 mm)
0.006 (0.15 mm)
0.002 (0.05 mm)
- 0.002 (0.05 mm)
0.0256 (0.65 mm) TYP.
0.118 (3.00 mm)
± 0.004 (0.1 mm)
SQ.
0.193 (4.90 mm)
REF.
Operating Characteristics at 25°C (0, +5 V)
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3. Insertion loss state and J
1
port.
4. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Specifications subject to change without notice. 10/99A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
4
Rise, Fall (10/90% or 90/10% RF) 25 ns
On, Off (50% CTL to 90/10% RF) 150 ns
Video Feedthru 50 mV
Input Power for 1 dB Compression 0.7–2.5 GHz +28 dBm
Intermodulation Intercept Point (IP3) For Two-tone Input Power +5 dBm 0.7–2.5 GHz +45 dBm
Control Voltages V
Low
= 0 to 0.2 V @ 20 µA Max.
V
High
= +5 V @ 50 µA Max. to +7 V @ 200 µA Max.
V
S
= V
High
± 0.2 V
GaAs IC High Isolation SPST Switch
Positive Control 0.7–2.5 GHz
Features
■ Single Positive Control Voltage (0, +5 V)
■ Base Station Synthesizer Switch
■ High Isolation (45 dB @ 0.9, 1.9 GHz)
■ J
1
Port Non-Reflective
■ Miniature Low Cost MSOP-8
Plastic Package
MSOP-8
AS165-59
Description
The AS165-59 SPST IC FET switch is absorptive on the
input.The switch features high isolation and low insertion
loss. Ideal building block for base station applications
where synthesizer isolation is critical. Use in conjunction
with the AS164-80 SPDT switch to meet GSM synthesizer
switch isolation requirements.
Parameter
1
Frequency Min. Typ. Max. Unit
Insertion Loss
2
0.7–1.0 GHz 0.7 0.9 dB
1.0–2.0 GHz 0.8 1.1 dB
2.0–2.5 GHz 1.2 1.4 dB
Isolation 0.7–2.0 GHz 39 45 dB
2.0–2.5 GHz 30 38 dB
VSWR
3
0.7–1.8 GHz 1.7:1 1.9:1
1.8–2.5 GHz 1.5:1 1.8:1
Electrical Specifications at 25°C (0, +5 V)
0.012 (0.30 mm)
PIN 1
PIN 1
INDICATOR
+ 0.006 (0.15 mm)
7.0˚
TYP.
0.038 (0.95 mm)
0.030 (0.75 mm) 0.017
(0.43 mm)
8.0˚
MAX.
0.028 (0.70 mm)
0.016 (0.40 mm)
0.007 (0.18 mm)
± 0.005 (0.12 mm)
0.006 (0.15 mm)
0.002 (0.05 mm)
- 0.002 (0.05 mm)
0.0256 (0.65 mm) TYP.
0.118 (3.00 mm)
± 0.004 (0.1 mm)
SQ.
0.193 (4.90 mm)
REF.
Operating Characteristics at 25°C (0, +5 V)
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3. Insertion loss state and J
1
port.
4. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.