FAST RECOVERY DIODE ARF676
Repetitive voltage up to 4800 V
Mean forward current 1515 A
Surge current 18 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol Characteristic Conditions Tj [°C] Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 140 4800 V
V RSM Non-repetitive peak reverse voltage 140 4900 V
I RRM Repetitive peak reverse current V=VRRM 140 100 mA
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1515 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1535 A
I FSM Surge forward current Sine wave, 10 ms 140 18 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1620 x1E3 A²s
V FM Forward voltage Forward current =1570 A 25 2.4 V
V F(TO) Threshold voltage 140 1.25 V
r F Forward slope resistance 140 0.500 mohm
SWITCHING
t rr Reverse recovery time I F = 1000 A 6 µs
Q rr Reverse recovery charge di/dt= 250 A/µs 140 2000 µC
I rr Peak reverse recovery current
VR = 100 V
800 A
s Softness (s-factor), min 0.5
V FR Peak forward recovery di/dt= 400 A/µs 140 40 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 18 °C/kW
T j Operating junction temperature -30 / 140 °C
F Mounting force 22.0 / 24.5 kN
Mass 300 g
ORDERING INFORMATION : ARF676 S 48
standard specification VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO Ansaldo Trasporti s.p.a.Unita' Semiconduttori