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FAST RECOVERY DIODE ARF674
Repetitive voltage up to 4500 V
Mean forward current 945 A
Surge current 15 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 125 4500 V
V RSM Non-repetitive peak reverse voltage 125 4600 V
I RRM Repetitive peak reverse current V=VRRM 125 80 mA
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 945 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 940 A
I FSM Surge forward current Sine wave, 10 ms 125 15 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1125 x1E3 A²s
V FM Forward voltage Forward current = 1570 A 25 3 V
V F(TO) Threshold voltage 125 1.90 V
r F Forward slope resistance 125 0.700 mohm
SWITCHING
t rr Reverse recovery time I F = 500 A 8 µs
Q rr Reverse recovery charge
di/dt= 30 A/µs
125 600 µC
I rr Peak reverse recovery current
VR = 100 V
150 A
s Softness (s-factor), min 0.4
V FR Peak forward recovery di/dt= 400 A/µs 42 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 21 °C/kW
T j Operating junction temperature -30 / 125 °C
F Mounting force 22.0 / 24.5 kN
Mass 520 g
ORDERING INFORMATION : ARF674 S 45
standard specification VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510