FAST RECOVERY DIODE ARF672
FOR IGBT,IEGT,GCT APPLICATIONS
Repetitive voltage up to 4500 V
SNUBBERLESS OPERATION
Mean forward current 935 A
LOW LOSSES SOFT RECOVERY
Surge current 15 kA
TARGET SPECIFICATION
mar 03 - ISSUE : 2
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 125 4500 V
V RSM Non-repetitive peak reverse voltage 125 4600 V
I RRM Repetitive peak reverse current V=VRRM 125 80 mA
V DC LINK Permanent DC voltage 125 2500 V
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 935 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 970 A
I FSM Surge forward current Sine wave, 10 ms 125 15 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1125 x1E3 A²s
V FM Forward voltage Forward current = =2500 A 125 4.18 V
V F(TO) Threshold voltage 125 1.80 V
r F Forward slope resistance 125 0.950 mohm
SWITCHING
t rr Reverse recovery time I F = 2100 A µs
Q rr Reverse recovery charge
di/dt= 1100 A/µs
1600 µC
I rr Peak reverse recovery current
VR = 1800 V
125 1100 A
s Softness (s-factor), min 0.5
E OFF Turn off energy dissipation 5.5 J
V FR Peak forward recovery di/dt= 400 A/µs 125 38 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 18 °C/kW
R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW
T j Operating junction temperature -30 / 125 °C
F Mounting force 22.0 / 24.5 kN
Mass 300 g
ORDERING INFORMATION : ARF672 S 45
standard specification VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510