FAST RECOVERY DIODE ARF671
FOR IGBT,IEGT,GCT APPLICATIONS
Repetitive voltage up to 4500 V
SNUBBERLESS OPERATION
Mean forward current 790 A
LOW LOSSES SOFT RECOVERY
Surge current 15 kA
TARGET SPECIFICATION
giu 00 - ISSUE : 02
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 125 4500 V
V RSM Non-repetitive peak reverse voltage 125 4600 V
I RRM Repetitive peak reverse current V=VRRM 125 80 mA
V DC LINK Permanent DC voltage 125 2800 V
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 790 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 820 A
I FSM Surge forward current Sine wave, 10 ms 125 15 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1125 x1E3 A²s
V FM Forward voltage Forward current = =2500 A 125 4.65 V
V F(TO) Threshold voltage 125 1.90 V
r F Forward slope resistance 125 1.100 mohm
SWITCHING
Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 125 µC
I rr Peak reverse recovery current
VR = 100 V
125 A
t rr Reverse recovery time I F = 2100 A µs
Q rr Reverse recovery charge
di/dt= 1000 A/µs
µC
I rr Peak reverse recovery current
VR = 1800 V
125 A
s Softness (s-factor), min
E OFF Turn off energy dissipation J
V FR Peak forward recovery di/dt= 400 A/µs 125 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 21 °C/kW
R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW
T j Operating junction temperature -30 / 125 °C
F Mounting force 22.0 / 24.5 kN
Mass 300 g
ORDERING INFORMATION : ARF671 S 45
standard specification VRRM/100
1000
525
2500
1400
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510