FAST RECOVERY DIODE ARF670
FOR IGBT,IEGT,GCT APPLICATIONS
Repetitive voltage up to 4500 V
SNUBBERLESS OPERATION
Mean forward current 1315 A
LOW LOSSES SOFT RECOVERY
Surge current 15 kA
TARGET SPECIFICATION
dic 02 - ISSUE : 01
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 140 4500 V
V RSM Non-repetitive peak reverse voltage 140 4600 V
I RRM Repetitive peak reverse current V=VRRM 140 150 mA
V DC LINK Permanent DC voltage 140 2500 V
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1315 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1370 A
I FSM Surge forward current Sine wave, 10 ms 140 15 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1125 x1E3 A²s
V FM Forward voltage Forward current = 1570 A 25 2.70 V
V F(TO) Threshold voltage 140 1.50 V
r F Forward slope resistance 140 0.60 mohm
SWITCHING
Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 140 1500 µC
I rr Peak reverse recovery current
VR = 100 V
650 A
Q rr Reverse recovery charge I F = 1000 A di/dt= 500 A/µs 2050 µC
I rr Peak reverse recovery current
VR = 350 V ±10%
140 1050 A
V pk Peak reverse recovery voltage
L= 1 µH ±10%
1400 V
s Softness (s-factor), min 0.5
E OFF Turn off energy dissipation 0.8 J
V FR Peak forward recovery voltage di/dt= 500 A/µs 25 35 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 18 °C/kW
R th(c-h) Thermal impedance Case to heatsink, double side cooled 6 °C/kW
T j Operating junction temperature -40 / 140 °C
F Mounting force 22.0 / 24.5 kN
Mass 300 g
ORDERING INFORMATION : ARF670 S 45
standard specification VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510