FAST RECOVERY DIODE ARF422
Repetitive voltage up to 1600 V
Mean forward current 940 A
Surge current 14 kA
TARGET SPECIFICATION
feb 97 - ISSUE : 02
Symbol Characteristic Conditions Tj [°C] Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 125 1600 V
V RSM Non-repetitive peak reverse voltage 125 1700 V
I RRM Repetitive peak reverse current V=VRRM 125 50 mA
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 940 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 930 A
I FSM Surge forward current Sine wave, 10 ms 125 14 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
980 x1E3 A²s
V FM Forward voltage Forward current =1200 A 125 1.57 V
V F(TO) Threshold voltage 125 1.20 V
r F Forward slope resistance 125 0.350 mohm
SWITCHING
t rr Reverse recovery time I F = 1000 A 3.5 µs
Q rr Reverse recovery charge di/dt= 60 A/µs 125 200 µC
I rr Peak reverse recovery current
VR = 50 V
120 A
s Softness (s-factor), min 0.5
V FR Peak forward recovery di/dt= 100 A/µs 125 5 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 37 °C/kW
T j Operating junction temperature -30 / 125 °C
F Mounting force 11.8 / 13.2 kN
Mass 300 g
ORDERING INFORMATION : ARF422 S 16
standard specification VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO Ansaldo Trasporti s.p.a.Unita' Semiconduttori