FAST RECOVERY DIODE ARF2012
Repetitive voltage up to 2600 V
Mean forward current 1525 A
Surge current 16 kA
FINAL SPECIFICATION
apr 97 - ISSUE : 04
Symbol Characteristic Conditions Tj [°C] Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 150 2600 V
V RSM Non-repetitive peak reverse voltage 150 2700 V
I RRM Repetitive peak reverse current V=VRRM 150 50 mA
CONDUCTING
I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1525 A
I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 1545 A
I FSM Surge forward current Sine wave, 10 ms 150 16 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1280 x1E3 A²s
V FM Forward voltage Forward current =3400 A 25 2.5 V
V F(TO) Threshold voltage 150 1.03 V
r F Forward slope resistance 150 0.362 mohm
SWITCHING
t rr Reverse recovery time I F = 1000 A 4.6 µs
Q rr Reverse recovery charge di/dt= 100 A/µs 150 800 µC
I rr Peak reverse recovery current
VR = 100 V
345 A
s Softness (s-factor), min 0.4
V FR Peak forward recovery di/dt= 400 A/µs 150 13 V
MOUNTING
R th(j-h) Thermal impedance Junction to heatsink, double side cooled 26 °C/kW
T j Operating junction temperature -30 / 150 °C
F Mounting force 18.0 / 20.0 kN
Mass 500 g
ORDERING INFORMATION : ARF2012 S 26
standard specification VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO Ansaldo Trasporti s.p.a.Unita' Semiconduttori