APT33GF120HR
器件描述：The Fast IGBT is a new generation of high voltage power IGBTs
器件厂商：ADPOW [Advanced Power Technology]
文件大小：26.01KB，共2页
Sponsor by e络盟器件资料摘要：
APT33GF120HR
1200V 38A
050-5974 Rev - 6-2000
PRELIMINARY
G
C
E
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop High Freq. Switching to 20KHz
Low Tail Current Ultra Low Leakage Current
Avalanche Rated RBSOA and SCSOA Rated
Hermetic Package
G70G97G115G116G32G73G71G66G84
TO-258
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KG87)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11G87G32T
C
= 125°C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT33GF120HR
1200
1200
±20
38
33
76
66
65
205
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
G
C
E
1200V 38A
050-5974 Rev - 6-2000
PRELIMINARY
G
C
E
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop High Freq. Switching to 20KHz
Low Tail Current Ultra Low Leakage Current
Avalanche Rated RBSOA and SCSOA Rated
Hermetic Package
G70G97G115G116G32G73G71G66G84
TO-258
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KG87)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11G87G32T
C
= 125°C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT33GF120HR
1200
1200
±20
38
33
76
66
65
205
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
G
C
E