APT33GF120B2RD
器件描述：The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
器件厂商：ADPOW [Advanced Power Technology]
文件大小：141.83KB，共8页
Sponsor by e络盟器件资料摘要：
PRELIMINAR
Y
MAXIMUM RATINGS (IGBT) All Ratings: T
C
= 25°C unless otherwise specified.
052-6254 Rev A
G
C
E
The Fast IGBT
™
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT
& FRED
APT33GF120B2RD
APT33GF120LRD
1200V 52A
TO-264
(LRD)
G
C
E
T-Max
™
(B2RD)
G
C
E
APT33GF120B2RD
APT33GF120LRD
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
Pulsed Collector Current
1
@ T
C
= 90°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
APT33GF120B2RD/LRD
1200
1200
±20
52
33
104
66
300
-55 to 150
300
Y
MAXIMUM RATINGS (IGBT) All Ratings: T
C
= 25°C unless otherwise specified.
052-6254 Rev A
G
C
E
The Fast IGBT
™
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT
& FRED
APT33GF120B2RD
APT33GF120LRD
1200V 52A
TO-264
(LRD)
G
C
E
T-Max
™
(B2RD)
G
C
E
APT33GF120B2RD
APT33GF120LRD
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
Pulsed Collector Current
1
@ T
C
= 90°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
APT33GF120B2RD/LRD
1200
1200
±20
52
33
104
66
300
-55 to 150
300